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Japanese
![Satoshi Moriyama](en_name_moriyama.gif)
|
Name |
Satoshi Moriyama |
Position |
Professor |
Degree(s) |
Ph.D. |
Main Subjects |
Electromagnetics and Practice I, II Electrical and Electronic Engineering Laboratory I, II Electronic Device II Quantum Device Engineering |
![Satoshi Moriyama](moriyama.jpg)
Specialty |
Semiconductor Device Engineering, Nanoelectronics |
Field of Research |
Physics and device applications in atomic-layer materials Quantum devices based on silicon technology |
Academic Society |
The Japan Society of Applied Physics The Physical Society of Japan |
Short Curriculum Vitae |
He received the Bachelor of Science degree in Physics from Tokyo
University of Science, Tokyo, Japan, in 2000 and Master of Science and
Ph.D degrees in Electrical Engineering from Tokyo Institute of
Technology, Tokyo, Japan, in 2002 and 2005, respectively. In 2005, he
joined RIKEN Institute, Saitama, Japan, as Special Postdoctoral
Researcher. From 2007 to 2020, he was with National Institute for
Materials Science (NIMS), Tsukuba, Japan, as MANA Independent Scientist
and Senior Researcher. In 2020, he joined Tokyo Denki University (TDU),
Tokyo, Japan, as Associate Professor, and currently Professor from 2022.
|
Mail |
![](mail_moriyama.gif) |
Selected Papers
- Satoshi Moriyama, Yoshifumi Morita: “Valley currents in graphene”
In: Tapash Chakraborty (eds.) Encyclopedia of Condensed Matter Physics
(Second Edition), 1, 652-658, Oxford: Elsevier (2024).
DOI: 10.1016/B978-0-323-90800-9.00008-1
- Satoshi Moriyama, Takahiro Mori, Keiji Ono: “Resonant tunneling and
quantum interference of a two-spin system in silicon tunnel FETs”,
Applied Physics Express, 16, 114001 (2023).
DOI: 10.35848/1882-0786/ad0500
- Takuya Iwasaki, Shu Nakaharai, Yutaka Wakayama, Kenji Watanabe,
Takashi Taniguchi, Yoshifumi Morita, Satoshi Moriyama: “Single-Carrier
Transport in Graphene/hBN Superlattices”, Nano Letters, 20, 2551-2557
(2020). DOI: 10.1021/acs.nanolett.9b05332
- Kosuke Endo, Katsuyoshi Komatsu, Takuya Iwasaki, Eiichiro Watanabe,
Daiju Tsuya, Kenji Watanabe, Takashi Taniguchi, Yutaka Noguchi, Yutaka
Wakayama, Yoshifumi Morita, and Satoshi Moriyama: “Topological valley
currents in bilayer graphene/hexagonal boron nitride superlattices”,
Applied Physics Letters, 114, 243105 (2019). (selected as a Featured
Article) DOI: 10.1063/1.5094456
- Keiji Ono, Takahiro Mori, and Satoshi Moriyama: “High-temperature
operation of a silicon qubit”, Scientific Reports, 9, 469 (2019). DOI:
10.1038/s41598-018-36476-z
- Katsuyoshi Komatsu, Yoshifumi Morita, Eiichiro Watanabe, Daiju
Tsuya, Kenji Watanabe, Takashi Taniguchi and Satoshi Moriyama:
“Observation of the quantum valley Hall state in ballistic graphene
superlattices”, Science Advances, 4, eaaq0194 (2018). DOI:
10.1126/sciadv.aaq0194
Laboratory Introduction
In our laboratory, we are working on electrical properties in
two-dimensional atomic-layer materials and measurement/control of
cutting-edge silicon quantum devices. We are developing new functional
electronics, such as high-performance electronic and optoelectronic
devices, sensors, and quantum computers, by exploring applications to
new functions and principles.
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