Satoshi Moriyama

Name Satoshi Moriyama
Position Professor
Degree(s) Ph.D.
Main Subjects Electromagnetics and Practice I, II
Electrical and Electronic Engineering Laboratory I, II
Electronic Device II
Quantum Device Engineering
Satoshi Moriyama
Specialty Semiconductor Device Engineering, Nanoelectronics
Field of Research Physics and device applications in atomic-layer materials
Quantum devices based on silicon technology
Academic Society The Japan Society of Applied Physics
The Physical Society of Japan
Short Curriculum Vitae He received the Bachelor of Science degree in Physics from Tokyo University of Science, Tokyo, Japan, in 2000 and Master of Science and Ph.D degrees in Electrical Engineering from Tokyo Institute of Technology, Tokyo, Japan, in 2002 and 2005, respectively. In 2005, he joined RIKEN Institute, Saitama, Japan, as Special Postdoctoral Researcher. From 2007 to 2020, he was with National Institute for Materials Science (NIMS), Tsukuba, Japan, as MANA Independent Scientist and Senior Researcher. In 2020, he joined Tokyo Denki University (TDU), Tokyo, Japan, as Associate Professor, and currently Professor from 2022.

Selected Papers

  • Satoshi Moriyama, Yoshifumi Morita: “Valley currents in graphene” In: Tapash Chakraborty (eds.) Encyclopedia of Condensed Matter Physics (Second Edition), 1, 652-658, Oxford: Elsevier (2024). DOI: 10.1016/B978-0-323-90800-9.00008-1
  • Satoshi Moriyama, Takahiro Mori, Keiji Ono: “Resonant tunneling and quantum interference of a two-spin system in silicon tunnel FETs”, Applied Physics Express, 16, 114001 (2023). DOI: 10.35848/1882-0786/ad0500
  • Takuya Iwasaki, Shu Nakaharai, Yutaka Wakayama, Kenji Watanabe, Takashi Taniguchi, Yoshifumi Morita, Satoshi Moriyama: “Single-Carrier Transport in Graphene/hBN Superlattices”, Nano Letters, 20, 2551-2557 (2020). DOI: 10.1021/acs.nanolett.9b05332
  • Kosuke Endo, Katsuyoshi Komatsu, Takuya Iwasaki, Eiichiro Watanabe, Daiju Tsuya, Kenji Watanabe, Takashi Taniguchi, Yutaka Noguchi, Yutaka Wakayama, Yoshifumi Morita, and Satoshi Moriyama: “Topological valley currents in bilayer graphene/hexagonal boron nitride superlattices”, Applied Physics Letters, 114, 243105 (2019). (selected as a Featured Article) DOI: 10.1063/1.5094456
  • Keiji Ono, Takahiro Mori, and Satoshi Moriyama: “High-temperature operation of a silicon qubit”, Scientific Reports, 9, 469 (2019). DOI: 10.1038/s41598-018-36476-z
  • Katsuyoshi Komatsu, Yoshifumi Morita, Eiichiro Watanabe, Daiju Tsuya, Kenji Watanabe, Takashi Taniguchi and Satoshi Moriyama: “Observation of the quantum valley Hall state in ballistic graphene superlattices”, Science Advances, 4, eaaq0194 (2018). DOI: 10.1126/sciadv.aaq0194

Laboratory Introduction

In our laboratory, we are working on electrical properties in two-dimensional atomic-layer materials and measurement/control of cutting-edge silicon quantum devices. We are developing new functional electronics, such as high-performance electronic and optoelectronic devices, sensors, and quantum computers, by exploring applications to new functions and principles.

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